Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations
- 2 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 31-35
- https://doi.org/10.1016/0022-0248(95)00390-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Optimization of luminescent properties with respect to crystal growth temperatures for SiGe single quantum wells grown by molecular beam epitaxyJournal of Applied Physics, 1995
- Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphereApplied Physics Letters, 1993
- Abrupt compositional transition in luminescent Si1−xGex/Si quantum well structures fabricated by segregant assisted growth using Sb adlayerApplied Physics Letters, 1993
- Well-resolved band-edge photoluminescence of excitons confined in strained quantum wellsPhysical Review Letters, 1991
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in SiJapanese Journal of Applied Physics, 1987
- Antimony adsorption on siliconSurface Science, 1984