Abrupt compositional transition in luminescent Si1−xGex/Si quantum well structures fabricated by segregant assisted growth using Sb adlayer
- 19 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (3) , 388-390
- https://doi.org/10.1063/1.110052
Abstract
Luminescent Si0.8Ge0.2/Si single quantum well structures with abrupt interfaces were successfully grown by segregant assisted growth (SAG) using Sb adlayer. The emission energy shifted to the lower side compared to the sample grown without Sb adlayer due to the suppression of the surface segregation of Ge atoms. Improved abruptness of interfaces was confirmed by sputter depth profile measurement, where no segregation edge was seen in the sample grown by SAG technique. Light emitting p‐i‐n diode structure can be fabricated by utilizing the incorporation of Sb during SAG.Keywords
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