Strain-induced anisotropy measurement in oxide films grown on silicon
- 15 September 1982
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 21 (18) , 3307-3313
- https://doi.org/10.1364/ao.21.003307
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 9 references indexed in Scilit:
- Parameter correlation and precision in multiple-angle ellipsometryApplied Optics, 1981
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- Strain induced anisotropy in As_2S_3, As_2Se_3, and ZnSe films on KCl substrates via 106-μm and 06328-μm ellipsometer measurements and 06328-μm reflector measurementsApplied Optics, 1979
- Optical Evidence for a Silicon‐Silicon Oxide InterlayerJournal of the Electrochemical Society, 1979
- Precision interferometer for measuring photoelastic constantsApplied Optics, 1977
- Parameter-Correlation and Computational Considerations in Multiple-Angle Ellipsometry*Journal of the Optical Society of America, 1971
- RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACEApplied Physics Letters, 1967
- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966
- Photoelastic Constants of Vitreous Silica and Its Elastic Coefficient of Refractive IndexJournal of Applied Physics, 1959