Stress dependence of the metal-insulator transition in doped semiconductors
- 15 July 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (2) , 1082-1085
- https://doi.org/10.1103/physrevb.26.1082
Abstract
The single-particle energy bands are calculated for a lattice of donors in many-valley semiconductors with a moderately strong central-cell potential using a pseudopotential constructed by the method of polarized orbitals. The variation of the metal-insulator transition with uniaxial stress is found to be in a direction opposite to that expected for effective-mass donors, as seen experimentally in phosphorus-doped silicon and arsenic-doped germanium.Keywords
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