Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 773-777
- https://doi.org/10.1016/0168-583x(91)96277-r
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Formation of thin films of CoSi2: Nucleation and diffusion mechanismsThin Solid Films, 1985
- Electrical properties of thin Co2Si, CoSi, and CoSi2 layers grown on evaporated siliconJournal of Electronic Materials, 1984
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Interactions in the Co/Si thin-film system. II. Diffusion-marker experimentsJournal of Applied Physics, 1978
- Interactions in the Co/Si thin-film system. I. KineticsJournal of Applied Physics, 1978
- Reaction of thin metal films with SiO2 substratesSolid-State Electronics, 1978