Critical analysis of weighting functions for the deep level transient spectroscopy of semiconductors
- 1 March 1998
- journal article
- Published by IOP Publishing in Measurement Science and Technology
- Vol. 9 (3) , 477-484
- https://doi.org/10.1088/0957-0233/9/3/023
Abstract
More than 20 weighting functions proposed for DLTS are critically compared. It is shown that the variety of DLTS peak widths of different weighting functions was primarily due to the variety of shapes of the high-temperature side of the peak. A refinement of the classification scheme of the weighting functions is proposed. It is shown that the high-temperature side of the DLTS peak can be made independent of the weighting function, by considering the delay time between the end of the filling pulse and the beginning of the weighting function as an integral part of each weighting function. An optimum delay time (specific for each weighting function) is obtained by maximizing the figure of merit defined as the signal-to-noise ratio of the correlator divided by the DLTS peak width. Using the concept of optimum delay time, the functions can be classified into several groups according to their selectivity. The functions from one group differ only by their sensitivity, making it easy to select the functions with the best signal-to-noise ratios. In the second part of the paper, several misunderstandings concerning exponential correlators and double boxcars that frequently appear in the literature are revealed.Keywords
This publication has 24 references indexed in Scilit:
- A novel algorithm for higher order filtering in DLTSSolid-State Electronics, 1992
- A multipoint correlation method with binomial weighting coefficients for deep-level measurements in metal-oxide-semiconductor devicesJournal of Applied Physics, 1992
- Theoretical signal-to-noise ratio for correlators with linear averagingReview of Scientific Instruments, 1987
- Spectrum analyzer of exponentially decaying signalsReview of Scientific Instruments, 1983
- Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS)Solid-State Electronics, 1981
- High-resolution analysis of exponentially decaying transients for physics d.l.t.s. experimentsElectronics Letters, 1979
- Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient SpectroscopyJapanese Journal of Applied Physics, 1979
- A correlation method for semiconductor transient signal measurementsJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974