Oxidation of strained Si in a microwave electron cyclotron resonance plasma
- 13 January 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (2) , 217-219
- https://doi.org/10.1063/1.118370
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- A single-frequency approximation for interface-state density determinationPublished by Elsevier ,2002
- New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitorsSolid-State Electronics, 1994
- Growth and Processing of Relaxed-Si1-xGex/Strained-Si Structures for Metal-Oxide Semiconductor ApplicationsJapanese Journal of Applied Physics, 1994
- High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained SiJapanese Journal of Applied Physics, 1994
- Semi-analytical model for charge control in SiGe quantum well MOS structuresSolid-State Electronics, 1993
- High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained SiApplied Physics Letters, 1993
- Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/ heterostructuresPhysical Review B, 1992
- Enhancement mode n -channel Si/SiGe MODFET with high intrinsic transconductanceElectronics Letters, 1992
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- High electron mobility in modulation-doped Si/SiGeApplied Physics Letters, 1991