Study of thin silicon nitride films toy isothermal depolarization of mnos structures
- 16 May 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 65 (1) , 177-187
- https://doi.org/10.1002/pssa.2210650121
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Distribution and role of N—H and Si—H bonds in mnos structuresRevue de Physique Appliquée, 1978
- Computer model and charge transport studies in short gate charge-coupled devicesSolid-State Electronics, 1977
- Nonvolatile semiconductor memory devicesProceedings of the IEEE, 1976
- Electrical Conduction of Silicon Nitride Films Deposited by SiH4-NH3ReactionJapanese Journal of Applied Physics, 1976
- Memory traps in MNOS diodes measured by thermally stimulated currentSolid-State Electronics, 1976
- Trapping Levels in the Silicon—Silicon Nitride SystemPhysica Status Solidi (b), 1969
- The conduction processes in silicon nitrideCanadian Journal of Physics, 1968
- The Poole-Frenkel Effect with Compensation PresentJournal of Applied Physics, 1968
- Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia ReactionJournal of the Electrochemical Society, 1968
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967