Distribution and role of N—H and Si—H bonds in mnos structures
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 679-682
- https://doi.org/10.1051/rphysap:019780013012067900
Abstract
The effects of high temperature annealing on the structural and electrical properties of MNOS memory structures have been studied using multiple internal reflection (MIR) spectroscopy to determine the N—H and Si—H bonds in Si3N4 layer. Electrical methods applied were : the memory window decay rate, analysis of memory hysteresis, C-V curves and TSC technique. Results showed that there is an important role of the annealing temperature in the change of N—H and Si—H bonds. We have found the largest change in the number of N—H and Si—H bonds in the vicinity of SiO2-Si 3N4 interface. The change of fixed charge at the SiO 2-Si3N4 interface, the retention time and width of memory window are closely related to the change in the number of the Si—H and N—H groups. Electrical data showed a strong dependence not only on annealing temperature and time but on the composition of gas atmosphere used during the annealing. The TSC curves were significantly different for the annealed and unannealed MNOS structuresKeywords
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