Plasma Si nitride—A promising dielectric to achieve high-quality silicon MIS/IL solar cells
- 1 April 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (4) , 3076-3079
- https://doi.org/10.1063/1.329058
Abstract
Substantial advantages of plasma Si nitride, for the first time applied to silicon MIS inversion layer (MIS/IL) solar cells, are demonstrated: The highest positive interface charge densities ever used for this type of solar cell (up to 7.2×1012 cm−2), absolute stability of the charges up to the nitride despoition temperature (220 and 300 °C, respectively), excellent passivation of the entire cell, and good AR coating properties. High uv sensitive MIS/IL solar cells were fabricated with these layers on p–Si (100). AM1 efficiencies of 15% (active area) at 25 °C were obtained.This publication has 16 references indexed in Scilit:
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