High avalanche gain in small-area InP photodiodes
- 1 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (7) , 511-513
- https://doi.org/10.1063/1.91190
Abstract
Extremely high avalanche gains, up to 2×104, accompanied by low leakage current and moderate excess avalanche noise, have been observed in small areas of diffused p‐n junctions in undoped n‐type InP. The results imply that dislocation densities much less than 104 cm−2 probably will be a prerequisite for practical long‐wavelength avalanche photodiodes in the InGaAsP/InP system.Keywords
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