Enhancement of light-induced degradation in hydrogenated amorphous silicon due to carbon impurities

This publication has 10 references indexed in Scilit:

• Silicon matrix disorder in amorphous hydrogenated silicon alloys
  IEEE Transactions on Electron Devices, 1989
• Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon
  Applied Physics Letters, 1988
• Evidence for the intrinsic nature of light-induced defects in undopeda-Si:H
  Physical Review B, 1988
• Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films
  Applied Physics Letters, 1987
• Light-induced defect creation in hydrogenated amorphous silicon: A detailed examination using junction-capacitance methods
  Physical Review B, 1987
• Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films
  Applied Physics Letters, 1985
• Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
  Physical Review B, 1985
• Role of carbon in hydrogenated amorphous silicon solar cell degradation
  Applied Physics Letters, 1984
• Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
  Physical Review B, 1982
• Reversible conductivity changes in discharge-produced amorphous Si
  Applied Physics Letters, 1977