Evidence for the intrinsic nature of light-induced defects in undopeda-Si:H
- 15 May 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (14) , 8465-8467
- https://doi.org/10.1103/physrevb.37.8465
Abstract
Absorption measurements using photothermal deflection spectroscopy were performed on a series of a-Si:H films with various levels of typical impurities to investigate their role in light-induced defect formation. It was found that at low concentrations (<5 at. %) the light-induced defect creation rate is independent of impurity concentration for oxygen, nitrogen, and carbon, which agrees with electron-spin-resonance results.Keywords
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