Progress in the industrial production of SiC substrates for semiconductor devices
- 22 March 2001
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 80 (1-3) , 327-331
- https://doi.org/10.1016/s0921-5107(00)00658-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Nonmetallic crystals with high thermal conductivityPublished by Elsevier ,2004
- The status of SiC bulk growth from an industrial point of viewJournal of Crystal Growth, 2000
- Activation parameters for dislocation glide in α-SiCInternational Journal of Refractory Metals and Hard Materials, 1998
- Dislocation Content of Micropipes in SiCPhysical Review Letters, 1998
- A Theoretical and Empirical Perspective of SiC Bulk GrowthMRS Proceedings, 1998
- Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theoryJournal of Electronic Materials, 1997
- Micropipes and polytypism as a source of lateral inhomogeneities in SiC substratesMaterials Science and Engineering: B, 1997
- Phonon-electron scattering in single crystal silicon carbideApplied Physics Letters, 1993
- Thermal conductivity and electrical properties of 6H silicon carbideJournal of Applied Physics, 1979
- Capillary equilibria of dislocated crystalsActa Crystallographica, 1951