Growth of β-SiC layers by rapid thermal chemical vapour deposition
- 31 August 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 25 (2-4) , 177-182
- https://doi.org/10.1016/0167-9317(94)90014-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Low Temperature Epitaxial Silicon Growth in a Rapid Thermal ProcessorMRS Proceedings, 1991
- A limited reaction processor with plasma capabilityMicroelectronics Journal, 1990
- beta -SiC/Si heterojunction bipolar transistors with high current gainIEEE Electron Device Letters, 1988
- Interaction of H 2 O with Si(111) and (100): Critical Conditions for the Growth ofJournal of the Electrochemical Society, 1984