Temporal evolution of effects of ultrafast carrier dynamics in In_0.33Ga_0.67N: above and near the bandgap

This publication has 12 references indexed in Scilit:

• Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
  Journal of Crystal Growth, 2003
• Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells
  Journal of Applied Physics, 2003
• Femtosecond pump-probe reflectivity study of silicon carrier dynamics
  Physical Review B, 2002
• Time-resolved photoluminescence of ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}/\mathrm{G}\mathrm{a}\mathrm{N}$ multiple quantum well structures: Effect of Si doping in the barriers
  Physical Review B, 2001
• Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures
  Applied Physics Letters, 2000
• The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
  Science, 1998
• Probing ultrafast carrier and phonon dynamics in semiconductors
  Journal of Applied Physics, 1998
• Localized exciton and its stimulated emission in surface mode from single-layerInxGa1−xN
  Physical Review B, 1998
• Femtosecond studies of carrier dynamics in InGaN
  Applied Physics Letters, 1997
• Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration
  Journal of Applied Physics, 1997