Stress-Induced Raman Frequency Shift in CuInSe2 Thin Films Prepared by Laser Ablation
- 1 January 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (1B) , L135
- https://doi.org/10.1143/jjap.34.l135
Abstract
Thin films of CuInSe2 have been prepared by laser ablation using a Nd:YAG laser at substrate temperatures up to 450° C. Raman scattering experiments have shown that the frequency of the A 1 phonon mode for these films shifts markedly to higher frequencies similarly with CuInSe2 single crystals under compression. The existence of compressive stress in the films has been confirmed by observing the bending of a cover glass used as substrate. The magnitude and temperature dependence of the stress estimated from the frequency shifts agree with those determined from the degree of bending.Keywords
This publication has 12 references indexed in Scilit:
- Residual Compression in Ni Film Prepared by Laser AblationJapanese Journal of Applied Physics, 1994
- Influence of Pulse Width on CdS Film Prepared by YAG Laser AblationJapanese Journal of Applied Physics, 1993
- Raman spectra ofPhysical Review B, 1992
- Pressure dependence of the Ramanmode and pressure-induced phase transition inPhysical Review B, 1992
- Laser Ablation of CuInSe2 and CuIn/GaSe2 Alloys for Solar Cell ApplicationsMRS Proceedings, 1992
- Characterization of Copper Indium Diselenide Thin Films by Raman Scattering Spectroscopy for Solar Cell ApplicationsJapanese Journal of Applied Physics, 1989
- Theory of the band-gap anomaly inchalcopyrite semiconductorsPhysical Review B, 1984
- Electronic structure of the ternary chalcopyrite semiconductors CuAl, CuGa, CuIn, CuAl, CuGa, and CuInPhysical Review B, 1983
- Polarization‐Dependent Infrared Reflectivity Spectra of CuInSe2Physica Status Solidi (b), 1983
- Raman and infrared spectra of thesystemPhysical Review B, 1976