Carrier trapping by defect clusters in neutron-irradiated silicon
- 16 June 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 2 (2) , 261-265
- https://doi.org/10.1002/pssa.19700020211
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Isochronal annealing ofpandn-type silicon irradiated at 80°KPhilosophical Magazine, 1969
- Electron and neutron irradiation of boron and phosphorus-doped silicon at 80°KPhilosophical Magazine, 1969
- The Symmetry of Defect Clusters in Neutron-Irradiated SiliconPhysica Status Solidi (b), 1969
- Introduction Rates of Electrically Active Defects in n- and p-Type Silicon by Electron and Neutron IrradiationJournal of Applied Physics, 1968
- Investigation of Neutron-Irradiation Damage in Silicon by Transmission Electron MicroscopyJournal of Applied Physics, 1968
- Electrical Studies of Neutron-Irradiated-Type Si: Defect Structure and AnnealingPhysical Review B, 1967
- Electrical contacts to siliconSolid-State Electronics, 1965
- New Oxygen Infrared Bands in Annealed Irradiated SiliconPhysical Review B, 1964
- Magnetic Susceptibility and Electronic Specific Heat of Transition Metals and Alloys II. Pd Metal and Pd-Ag and Pd-Rh AlloysJournal of the Physics Society Japan, 1963
- Electroless Nickel Plating for Making Ohmic Contacts to SiliconJournal of the Electrochemical Society, 1957