Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO2/Glass Substrate
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7B) , L1231-1234
- https://doi.org/10.1143/jjap.30.l1231
Abstract
Metallic tin diffusion into p-type hydrogenated amorphous silicon (a-Si:H) deposited on a flat or textured SnO2/glass substrate has been dramatically reduced by introducing a photo-nitrided a-Si:H (5-Å-thick) diffusion barrier between photochemical vapor deposition (photo-CVD) a-Si:H and SnO2, and the diffusion depth is about 30 Å from the a-Si:H/SnO2 interface. It is also shown that the optical transmittance is significantly improved by employing a 5-Å-thick photo-nitrided barrier layer.Keywords
This publication has 2 references indexed in Scilit:
- Impurity diffusion barrier for a-Si:H/SnO2 systemJournal of Non-Crystalline Solids, 1989
- a-Si3N4:H/a-Si:H Superlattices produced by plasma enhanced nitridation of a-Si:HJournal of Non-Crystalline Solids, 1989