Low-threshold disorder-defined native-oxide delineated buried-heterostructure AlxGa1−xAs-GaAs quantum well lasers
- 22 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (16) , 1765-1767
- https://doi.org/10.1063/1.105084
Abstract
Impurity‐induced layer disordering (IILD) along with oxidation (native oxide) of high‐gap AlxGa1−xAs confining layers is employed to fabricate low‐threshold stripe‐geometry buried‐heterostructure AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) lasers. Silicon IILD is used to intermix the quantum well and waveguide regions with the surrounding confining layers (beyond the laser stripe) to provide optical and current confinement in the QW region of the stripe. The high‐gap AlxGa1−xAs upper confining layer is oxidized in a self‐aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions. AlxGa1−xAs‐GaAs QWH lasers fabricated by this method have continuous 300 K threshold currents as low as 5 mA and powers ≳ 3l mW/facet for ∼ 3‐μm‐wide active regions.Keywords
This publication has 15 references indexed in Scilit:
- Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasers by open-tube rapid thermal annealingApplied Physics Letters, 1990
- Disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2Applied Physics Letters, 1989
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988
- Buried heterostructure AlxGa1−xAs-GaAs quantum well lasers by Ge diffusion from the vaporApplied Physics Letters, 1988
- Low threshold buried heterostructure quantum well diode lasers by laser-assisted disorderingApplied Physics Letters, 1987
- Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasersJournal of Applied Physics, 1985
- Si-implanted and disordered stripe-geometry AlxGa1−xAs-GaAs quantum well lasersApplied Physics Letters, 1985
- Donor-induced disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum-well lasersJournal of Applied Physics, 1985
- Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disorderingApplied Physics Letters, 1984
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981