Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 731-740
- https://doi.org/10.1016/0022-0248(91)90550-o
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Sub-MHz spectral linewidth in 1.5μm separate-confinementheterostructure (SCH) quantum-well DFB LDsElectronics Letters, 1989
- Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low-pressure organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- High quality InGaAsPInP for multiple quantum well laser diodes grown by low-pressure OMVPEJournal of Crystal Growth, 1988
- Photoluminescence investigation of InGaAs-InP quantum wellsJournal of Applied Physics, 1987
- Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxyApplied Physics Letters, 1986
- Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxyApplied Physics Letters, 1986
- Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1985
- Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactorApplied Physics Letters, 1983
- Optical investigation of MQW system InP–InGaAs–InPJournal of Vacuum Science & Technology B, 1983