The enhanced Stark effects of coupled quantum wells and their application to tunable IR photodetectors
- 15 August 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (4) , 2598-2604
- https://doi.org/10.1063/1.355293
Abstract
[[abstract]]A tunable asymmetric coupled quantum well far-infrared photodetector is proposed in this paper. The basic asymmetric coupled quantum wells are composed of two quantum wells separated by a thin barrier. In this way, the electron in each well interacts strongly with other electrons to achieve a large Stark tuning effect. The eigenenergies and the wave functions of the quantum-well structures are solved by the self-consistent method, and the effect of the exchange interaction on the ground-state subband has also been taken into account. The absorption coefficient is evaluated by the density-of-states formalism. Based on theoretical calculations, tuning ranges from 8.2 to 11.3 mum and 7.8 to 10.5 mum are predicted for the proposed asymmetric coupled-quantum-well structure and high-low coupled-quantum-well structure, respectively. This tuning capability is achieved by varying the applied electric field in the 20-90-kV/cm range.[[fileno]]2030103010004[[department]]電機工程學This publication has 20 references indexed in Scilit:
- Low dark current step-bound-to-miniband transition InGaAs/GaAs/AlGaAs multiquantum-well infrared detectorApplied Physics Letters, 1992
- Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectorsApplied Physics Letters, 1991
- Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetectorApplied Physics Letters, 1989
- Bound-to-extended state absorption GaAs superlattice transport infrared detectorsJournal of Applied Physics, 1988
- High-detectivity D*=1.0×1010 cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detectorApplied Physics Letters, 1988
- Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrumApplied Physics Letters, 1988
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985