Fabrication of Bond and Etch Back Silicon on Insulator Using SiGe-MBE and Selective Etching Techniques
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Selective removal of a Si0.7Ge0.3 layer from Si(100)Applied Physics Letters, 1991
- Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch StopJournal of the Electrochemical Society, 1990
- A Si0.7Ge0.3 strained-layer etch stop for the generation of thin layer undoped siliconApplied Physics Letters, 1990
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988