Implant-dose dependence of grain size and {110} texture enhancements in polycrystalline Si films by seed selection through ion channeling

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Abstract
This work outlines an optimized seed selection through ion channeling (SSIC) process for enhancing the grain size and {110} texture of polycrystalline Si films grown by low-pressure chemical vapor deposition on SiO2. These films, 0.44 μm thick, were self-implanted at normal incidence to various doses (1–20 × 1014 cm−2) and subsequently recrystallized at 600 °C. An enhanced average grain diameter resulted after implantation and annealing, ranging from 0.10 to 2.0 μm (versus the as-deposited 0.080 μm) and increasing with the implant dose. The grain size versus implant dose behavior may be explained by a previously proposed stochastic model. An enhanced {110} texture was also observed after processing for implant doses of 6–14 ×1014 cm−2. The optimal dose was 11 × 1014 cm−2, for which the {220} diffracted x-ray intensity was 30 times the as-deposited value, and the 〈110〉 directions were confined to within ±4° (versus the as-deposited ±20°) of the surface normal. This experiment demonstrates the effectiveness of SSIC in growing strong {110}-textured polycrystalline Si films on amorphous insulators.