Low-temperature oxidation of silicon in microwave oxygen plasma
- 1 May 1990
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 25 (5) , 2344-2348
- https://doi.org/10.1007/bf00638025
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Low Temperature Oxidation of Silicon in a Microwave‐Discharged Oxygen PlasmaJournal of the Electrochemical Society, 1985
- The Mechanism of Plasma Oxidation on Floating Silicon SubstratesJournal of the Electrochemical Society, 1984
- The Formation of SiO2 in an RF Generated Oxygen Plasma: II . The Pressure Range Above 10 mTorrJournal of the Electrochemical Society, 1981
- The Formation of SiO2 in an RF Generated Oxygen Plasma: I . The Pressure Range Below 10 mTorrJournal of the Electrochemical Society, 1981
- Plasma Oxide FET DevicesJournal of the Electrochemical Society, 1981
- Present status of thin oxide films creation in a microwave plasmaCzechoslovak Journal of Physics, 1980
- Plasma oxidation of silicon in a microwave discharge and its specificityJournal of Physics D: Applied Physics, 1979
- Preparation and properties of plasma-anodized silicon dioxide filmsSolid-State Electronics, 1974
- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965