Picosecond hot electron light emission from submicron complementary metal–oxide–semiconductor circuits
- 17 February 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (7) , 889-891
- https://doi.org/10.1063/1.118305
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Silicon luminescence techniques for the characterization of hot-carrier and degradation phenomena in MOS devicesMicroelectronic Engineering, 1995
- Hot carrier evaluation of MOSFETs in ULSI circuits using the photon emission methodIEEE Transactions on Electron Devices, 1993
- Hot-carrier luminescence in SiPhysical Review B, 1992
- Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETsIEEE Transactions on Electron Devices, 1989
- Simultaneous subnanosecond timing information and 2D spatial information from imaging photomultiplier tubesReview of Scientific Instruments, 1987
- Hot-electron-induced photon and photocarrier generation in Silicon MOSFET'sIEEE Transactions on Electron Devices, 1984