Silicon luminescence techniques for the characterization of hot-carrier and degradation phenomena in MOS devices
- 30 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4) , 249-256
- https://doi.org/10.1016/0167-9317(95)00053-b
Abstract
No abstract availableKeywords
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