Reactive Ion Etching of Al Alloy Films in a Rotating Magnetic Field

1 February 1993

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 32 (2R) , 747
https://doi.org/10.1143/jjap.32.747

Abstract

Excellent etching characteristics of Al-1%Si-0.5%Cu/TiN film were obtained at low pressure of 0.9 Pa using a magnetically enhanced reactive ion etching system with a rotational permanent magnet. A 2-step resist stripping process was also developed in order to avoid after-corrosion and resist residue. Negative and positive flatband voltage (V _fb) shifts of Al/Si₃N₄/SiO₂/Si capacitor were observed using a static magnetic field, and the V _fb distribution is uniformalized using the rotational magnetic field. We simulated the drift motion of secondary electrons in the cathode sheath in order to clarify the origin of the V _fb distribution. The simulation results showed that the E×B drift motion of the electrons caused the nonuniform distribution of electron density on the wafer, and that this nonuniform distribution of the electrons corresponded to the V _fb distribution.

Keywords

This publication has 3 references indexed in Scilit:

Charge Build-Up in Magnetron-Enhanced Reactive Ion Etching
Japanese Journal of Applied Physics, 1991
Gate oxide damage from polysilicon etching
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