Direct determination of impact ionization quantum yield in Si by ballistic-electron-emission microscopy
- 7 February 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (6) , 928-931
- https://doi.org/10.1103/physrevlett.72.928
Abstract
Ballistic-electron-emission spectroscopy on Si(111)-(7×7) patches in pinholes of thin films on n-type Si(111) reveals collector currents as high as 210% of the tunneling current at a tip bias of 10 V. This electron multiplication is assigned to impact ionization in Si. Its quantum yield up to 7 eV kinetic energy is extracted from the spectra and compared to recent thoeretical results.
Keywords
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