Baseband amplifiers in transferred-substrate HBT technology
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Baseband amplifiers have been fabricated in the transferred-substrate HBT process. A Darlington amplifier achieved a DC gain of 15.6 dB with >50 GHz bandwidth. A mirror doubler amplifier achieved a DC gain of 6.8 dB with 86 GHz bandwidth. These amplifiers will be useful for future work in ADCs, DACs, and fiber-optic receivers, and serve to benchmark the transferred-substrate technology.Keywords
This publication has 7 references indexed in Scilit:
- 50-GHz bandwidth base-band amplifiers using GaAs-based HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 50 GHz feedback amplifier with AlInAs/GaInAs transferred-substrate HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technologyIEEE Electron Device Letters, 1998
- A 277-GHz f/sub max/ transferred-substrate heterojunction bipolar transistorIEEE Electron Device Letters, 1997
- Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1995
- 33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifierIEEE Journal of Solid-State Circuits, 1991
- A new wide-band Darlington amplifierIEEE Journal of Solid-State Circuits, 1989