A 277-GHz f/sub max/ transferred-substrate heterojunction bipolar transistor
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (5) , 228-231
- https://doi.org/10.1109/55.568774
Abstract
We report a AlInAs-GaInAs transferred-substrate heterojunction bipolar transistor (HBT). The transferred-substrate process permits fabrication of narrow and aligned collector-base and emitter-base junctions, reducing the collector-base capacitance and increasing the device f/sub max/. A device with aligned 0.7-/spl mu/m emitter and 1.6-/spl mu/m collector stripes has extrapolated 277 GHz f/sub max/ and 127 GHz f/sub /spl tau//, respectively.Keywords
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