Structure change and resistivity step of evaporated Ge films in dependence on the substrate temperature
- 16 March 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 16 (1) , 61-68
- https://doi.org/10.1002/pssa.2210160105
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Germanium films on sapphire and germanium substratesPhysica Status Solidi (a), 1972
- On the dislocation scattering in silicon-on-insulator filmsPhysica Status Solidi (a), 1970
- Solid Amorphous Ge and As as Examples of Lattice-Like Amorphous SubstancesJournal of Vacuum Science and Technology, 1969
- Reordering Diffusion Processes in Amorphous Thin FilmsJournal of Applied Physics, 1969
- Vacuum-Deposited Germanium Films on Polycrystalline Al2O3 SubstratesJournal of Applied Physics, 1967
- Charge-Carrier Mobility in Polycrystalline Semiconducting Films Based on Bulk Single-Crystal TheoryJournal of Applied Physics, 1967
- Textural and Electrical Properties of Vacuum-Deposited Germanium FilmsJournal of the Electrochemical Society, 1967
- Microstructure of Epitaxial Ge Films Deposited on (111) CaF2 SubstratesJournal of Applied Physics, 1966
- Textural Properties of Germanium FilmsJournal of Applied Physics, 1961
- Lattice-Scattering Mobility in GermaniumPhysical Review B, 1954