On the dislocation scattering in silicon-on-insulator films
- 16 July 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 2 (3) , K197-K200
- https://doi.org/10.1002/pssa.19700020346
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Analysis of Carrier Transport in Vacuum-Evaporated Epitaxial Films of Silicon on SpinelJournal of Applied Physics, 1969
- Epitaxial Growth of Silicon Films Evaporated on SapphireJapanese Journal of Applied Physics, 1969
- Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal SpinelJournal of the Electrochemical Society, 1969
- Mechanical and electrical properties of epitaxial silicon films on spinelSolid-State Electronics, 1968
- Carrier Transport in Thin Silicon FilmsJournal of Applied Physics, 1968
- Electrically and optically active defects in silicon-on-sapphire filmsJournal of Crystal Growth, 1968
- The Deposition of Silicon on Single-Crystal Spinel SubstratesJournal of the Electrochemical Society, 1968
- The epitaxy of silicon on alumina—structural effectsPhilosophical Magazine, 1966
- Kristallbaufehler beim epitaxialen Wachstum von Silizium auf Magnesium–Aluminium‐SpinellPhysica Status Solidi (b), 1966
- XVI. Scattering of electrons by charged dislocations in semiconductorsJournal of Computers in Education, 1955