Low-Energy-Electron Diffraction Study of the Epitaxy of Si on Si
- 1 January 1967
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- A LEED study of the epitaxial growth of copper on the (110) surface of tungstenSurface Science, 1966
- Growth of epitaxial silicon layers by vacuum evaporationPhilosophical Magazine, 1965
- Growth of epitaxial silicon layers by vacuum evaporationPhilosophical Magazine, 1964
- Surface reactions of silicon with aluminum and with indiumSurface Science, 1964
- Studies of monolayers of lead and tin on Si(111) surfacesSurface Science, 1964
- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964
- Epitaxial Growth of Silicon by Vacuum SublimationNature, 1963
- Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporationVacuum, 1963
- Structure of epitaxed copper deposited by evaporation onto a clean (00.1) face of a titanium crystalJournal of Physics and Chemistry of Solids, 1958
- Penetration of Low Speed Diffracted ElectronsPhysical Review B, 1936