Growth of epitaxial silicon layers by vacuum evaporation
- 1 April 1964
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 9 (100) , 691-701
- https://doi.org/10.1080/14786436408211881
Abstract
Epitaxial Si layers have been grown on single crystal Si substrates by the vacuum evaporation method. The apparatus and experimental procedure used are described, and an initial assessment of the layers is given. The growth was markedly dependent on the deposition rate. In particular, when the rate was increased beyond a certain critical value, no stacking-fault defects occurred in the layers.Keywords
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