An Electron Undulating Ring Dedicated to VLSI Lithography

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Abstract
The unique capability of synchrotron radiation (SR) from the electron undulating ring has been shown to be advantageous for expanding the exposed area of SR in VLSI lithography. Vertical and horizontal undulating motions of stored beams have been demonstrated around the horizontal design orbit using two perturbator magnets. The maximum vertical displacement of a 500-MeV beam is ±10 mm and the maximum vertical tilt angle of the undulating beam near the nodes is ±2.5 mrad for a perturbator field of 130 gauss with an azimuthal length of 28 cm. The vertical undulating beam near the node can expand the exposed area of SR by a factor of more than five. The perturbator field dependence of the tilt angle and the relation between the nodes observed in the undulating motion and the betatron numbers are explained using an empirical expression.