Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures
- 9 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 215-218
- https://doi.org/10.1016/s0167-9317(97)00051-8
Abstract
No abstract availableKeywords
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