New observations on near band-edge luminescence in gallium arsenide phosphide (GaAs1−xPx)
- 15 December 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (12) , 718-720
- https://doi.org/10.1063/1.1655374
Abstract
We have found that the photoluminescence peak energy of n‐type GaAs1−xPx crystals in the range 0.3<x17 carriers cm−3). For all the crystals examined, the room‐temperature photoluminescence spectrum consists of a single band corresponding to near band‐edge emission. In crystals containing less than 1016 carriers cm−3, the peak energy variation with crystal composition lies close to a straight line connecting the direct band gaps of GaAs and GaP. In crystals deliberately doped with sulfur or selenium to concentrations in the 1016–1018‐cm−3 range, the variation is close to the quadratic expression for band‐gap variation with a bowing parameter of c =0.21.Keywords
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