Electroluminescence and photoluminescence of GaAs : Ge prepared by liquid phase epitaxy
- 1 November 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (9) , 511-513
- https://doi.org/10.1063/1.1654979
Abstract
Optical data are presented relating the photoluminescence emission of GaAs : Ge epitaxial layers with hole concentrations in the range from 6 × 1016 to 2.7 × 1019 cm−3. These data are supplemented with electroluminescence results obtained using diodes where the p side of the junction consists of GaAs : Ge. Measurements reported include the peak position of the electroluminescence and photoluminescence peaks, half‐intensity bandwidths, and radiative efficiency at room temperature.Keywords
This publication has 10 references indexed in Scilit:
- Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxyJournal of Applied Physics, 1973
- Spontaneous and stimulated recombination in p+-n-n+(AlGa)As-GaAs heterojunction laser diodesIEEE Journal of Quantum Electronics, 1973
- Electron diffusion length in solution-grown GaAs : GeApplied Physics Letters, 1973
- Thin solution multiple layer epitaxyJournal of Crystal Growth, 1972
- EFFICIENT ELECTRON EMISSION FROM GaAs–Al1−xGaxAs OPTOELECTRONIC COLD-CATHODE STRUCTURESApplied Physics Letters, 1971
- Distribution Coefficient of Germanium in Gallium Arsenide Crystals Grown from Gallium SolutionsJournal of Applied Physics, 1971
- Germanium-Doped Gallium ArsenideJournal of Applied Physics, 1970
- Auger recombination in heavily doped p-type GaAsSolid State Communications, 1969
- Auger Recombination in GaAsJournal of Applied Physics, 1968
- Luminescence due to Ge Acceptors in GaAsJournal of Applied Physics, 1968