Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films
- 31 December 1983
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 14 (6) , 88-107
- https://doi.org/10.1016/s0026-2692(83)80089-5
Abstract
No abstract availableKeywords
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