Absence of long-range ordered reconstruction on the GaAs(311)A surface
Open Access
- 15 June 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (23) , 15397-15400
- https://doi.org/10.1103/physrevb.55.15397
Abstract
We have investigated the decapped GaAs(311)A surface using both scanning tunneling microscopy and synchrotron-radiation photoemission. While our data are in broad agreement with the structural model of GaAs(311)A proposed in a recent study [Wassermeier et al., Phys. Rev. B 51, 14 721 (1995)], we find considerable differences in the surface order. In particular, the As dimer rows are unbroken over much shorter length scales and are highly kinked. We observe a correspondingly lower degree of anisotropy in the surface roughness than that previously reported. An (8×1) reconstruction was not observed. An analysis of As 3d and Ga 3d core-level photoemission spectra suggests that surface As atoms are in only one bonding configuration while surface Ga adopts two different bonding states. We discuss possible origins for the core-level spectra surface components.Keywords
This publication has 14 references indexed in Scilit:
- Surface electronic structure of GaAs(311)A studied by angle-resolved photoelectron spectroscopySurface Science, 1996
- (2×4)/c(2×8) to (4×2)/c(8×2) transition on GaAs(001) surfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B SubstratesJapanese Journal of Applied Physics, 1995
- Double chain structures on the Sb-terminated GaAs(111)BsurfacePhysical Review B, 1995
- Molecular beam epitaxial heterostructures in the (311)A orientationJournal of Vacuum Science & Technology B, 1994
- Direct synthesis of corrugated superlattices on non-(100)-oriented surfacesPhysical Review Letters, 1991
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopyPhysical Review Letters, 1990
- Atomic and electronic structures of (111), (211), and (311) surfaces of GaAsJournal of Vacuum Science & Technology B, 1985
- Core-level photoemission study of MBE-grown GaAs(111) and (100) surfacesJournal of Vacuum Science & Technology B, 1985