Soft breakdown in titanium-silicided shallow source/drain junctions
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (5) , 191-193
- https://doi.org/10.1109/55.55246
Abstract
Electrical characterization of the leakage current in p/sup +//n shallow junctions (X/sub j/=130 nm) shows that the current increases dramatically with titanium thickness and strongly depends on the reverse-bias voltage. The activation energy of leakage current extracted from the temperature dependence of the current decreases with increasing reverse-bias voltage. This behavior cannot be explained by the Shockley-Hall-Read (SHR) generation-recombination mechanism. A mechanism involving Frenkel-Poole barrier lowering of a trap potential is proposed.Keywords
This publication has 8 references indexed in Scilit:
- Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical CharacteristicsJournal of the Electrochemical Society, 1989
- Titanium Silicide Formation and Arsenic Dopant Behavior under Rapid Thermal Treatments in VacuumJournal of the Electrochemical Society, 1989
- Non-ideal base current in bipolar transistors at low temperaturesIEEE Transactions on Electron Devices, 1987
- Analysis of the soft reverse characteristics of n+p drain diodesSolid-State Electronics, 1985
- Development of the Self-Aligned Titanium Silicide Process for VLSI ApplicationsIEEE Journal of Solid-State Circuits, 1985
- Titanium disilicide self-aligned source/drain + gate technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Electric field effect on the thermal emission of traps in semiconductor junctionsJournal of Applied Physics, 1979
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975