Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing
- 15 July 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (2) , 663-665
- https://doi.org/10.1063/1.343534
Abstract
Rapid thermal annealing of GaAs within an enclosed, SiC‐coated graphite susceptor is shown to eliminate slip formation during implant activation treatments (900 °C, 10 s) and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. The peak carrier concentration obtained in Si‐implanted (3×1012 cm−2, 60 keV) GaAs by both methods is comparable, but the wafers annealed in the susceptor have tighter carrier profile width distributions measured over the whole wafer area.This publication has 14 references indexed in Scilit:
- Elimination of slip lines in capless rapid thermal annealing of GaAsJournal of Materials Research, 1988
- Thermal and stress analysis of semiconductor wafers in a rapid thermal processing ovenIEEE Transactions on Semiconductor Manufacturing, 1988
- Ion Implantation and RTA in III-V MaterialsMRS Proceedings, 1988
- Rapid thermal annealing of Si-implanted GaAs with trimethylarsenic overpressureApplied Physics Letters, 1987
- New rapid thermal annealing for GaAs digital integrated circuitsJournal of Applied Physics, 1987
- Direct measurement of evaporation during rapid thermal processing of capped GaAsApplied Physics Letters, 1987
- Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity techniqueApplied Physics Letters, 1986
- Crystallographic slip in GaAs wafers annealed using incoherent radiationApplied Physics Letters, 1985
- Transient Thermal Processing of GaAsMRS Proceedings, 1985
- Rapid Thermal Annealing in III-V CompoundsMRS Proceedings, 1985