Ion Implantation and RTA in III-V Materials

This publication has 76 references indexed in Scilit:

• Improved MODFET performance through ion implantation in the gate region
  IEEE Electron Device Letters, 1987
• SiFx and SFx molecular ion implantations into GaAs
  Applied Physics Letters, 1987
• Effect of multiple implants on the mixing of AlAs/GaAs superlattices
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Recoil implantation of Si into GaAs by as ion bombardment
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Shallow implants into GaAs
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs Superlattice
  Japanese Journal of Applied Physics, 1986
• Temperature Response of GaAs in a Rapid Thermal Annealing System
  Journal of the Electrochemical Society, 1986
• Pill-box capless thermal-heat-pulse annealing of ion-implanted GaAs
  IEEE Electron Device Letters, 1984
• Disorder of an AlAs-GaAs superlattice by silicon implantation
  Applied Physics Letters, 1982
• IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity
  Applied Physics Letters, 1981