Growth of GaSb on GaAs/AlAs mirrors for 1.68 μm detectors
- 31 July 1996
- journal article
- Published by Elsevier in Optical Materials
- Vol. 6 (1-2) , 69-74
- https://doi.org/10.1016/0925-3467(96)00024-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Long-wavelength GaAs/AlAs distributed Bragg reflectorsfor use in GaSb-basedresonant cavity detectorsElectronics Letters, 1995
- Electroluminescence out to 2.1 mu m observed in GaSb/InxGa1-xSb quantum wells grown by MOVPESemiconductor Science and Technology, 1994
- Improved materials for MOVPE growth of GaSb and InSbSemiconductor Science and Technology, 1993
- Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPESemiconductor Science and Technology, 1993
- InGaSb/GaSb photodiodes grown by MOVPEJournal of Crystal Growth, 1992
- MOVPE grown Ga 0.6 In 0.4 Sb photodiodes for 2.55 μm detectionElectronics Letters, 1992
- Tandem gallium solar cell voltage-matched circuit performance projectionsSolar Cells, 1991
- GaSb heterostructures grown by MOVPEJournal of Crystal Growth, 1988
- A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- Undopedn-Type GaSb Grown by Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1974