Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2A) , L150
- https://doi.org/10.1143/jjap.35.l150
Abstract
We investigated the optimum molecular beam epitaxy (MBE) growth conditions for fabrication of a high-reflectivity distributed Bragg reflector (DBR) on (411)A GaAs substrates with extremely flat heterointerfaces. A high-reflectivity DBR mirror consisting of AlAs/GaAs was successfully fabricated under the investigated optimum conditions of growth temperature of 580°C with V/III ( As4/Ga) ratio of ∼8. Using this high-reflectivity DBR mirror, we succeeded for the first time in the optically pumped pulse operation of InGaAs vertical-cavity surface-emitting lasers (VCSELs) at room temperature on (411)A GaAs substrates with a threshold excitation power density of 11 MW/cm2.Keywords
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