Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation
Open Access
- 29 July 2013
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (5) , 051104
- https://doi.org/10.1063/1.4817255
Abstract
We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm.Keywords
Funding Information
- DFG (248609)
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