Applications of CoSi2 to VLSI and ULSI
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Optical properties of epitaxialon Si from 0.062 to 22.3 eVPhysical Review B, 1993
- Ellipsometric measurements of the CoSi2 formation from very thin cobalt films on siliconJournal of Applied Physics, 1992
- Interactions and Stability of Cu on CoSi2MRS Proceedings, 1992
- Control of misoriented grains and pinholes in CoSi2 grown on Si(001)Journal of Crystal Growth, 1991
- Epitaxial Growth of Silicon on CoSi2 (001)/Si (001)MRS Proceedings, 1991
- Codeposited silicides in very-large-scale integrationThin Solid Films, 1986
- GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURESMRS Proceedings, 1985
- Preparation of surfaces for high quality interface formationJournal of Vacuum Science & Technology A, 1984
- Epitaxial silicidesThin Solid Films, 1982
- Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon InterfaceJapanese Journal of Applied Physics, 1981