The electron trapping behavior of silicon dioxide with ion implanted aluminum
- 1 September 1977
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 6 (5) , 569-579
- https://doi.org/10.1007/bf02672234
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structuresJournal of Applied Physics, 1976
- Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °KJournal of Applied Physics, 1976
- Electron trapping in aluminum−implanted silicon dioxide films on siliconJournal of Applied Physics, 1975
- Optically induced injection of hot electrons into SiO2Journal of Applied Physics, 1974
- Avalanche Injection of Electrons into Insulating SiO2 Using MOS StructuresJournal of Applied Physics, 1970
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969