Effect of air annealing on the electronic properties of solar cells
- 15 August 1996
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 43 (1) , 73-78
- https://doi.org/10.1016/0927-0248(95)00167-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Electronic characterization of heterojunctions by surface potential monitoringJournal of Electronic Materials, 1995
- Constructing band diagrams of semiconductor heterojunctionsApplied Physics Letters, 1995
- Formation and electronic properties of the CdS/CuInSe2 (011) heterointerface studied by synchrotron-induced photoemissionJournal of Applied Physics, 1995
- Prediction and observation of II–VI/CuInSe2 heterojunction band offsetsJournal of Electron Spectroscopy and Related Phenomena, 1994
- Polar Ligand Adsorption Controls Semiconductor Surface PotentialsJournal of the American Chemical Society, 1994
- ZnO/CdS/CuInSe2 thin-film solar cells with improved performanceApplied Physics Letters, 1993
- Surface passivation of polycrystalline, chalcogenide based photovoltaic cellsSolar Cells, 1991
- Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performanceApplied Physics Letters, 1989
- EBIC investigations of junction activity and the role of oxygen in CdS/CuInSe2 devicesSolar Cells, 1986
- The role of oxygen in CuInSe2 thin films and CdS/CuInSe2 devicesSolar Cells, 1986